@misc{oai:ir.soken.ac.jp:00000580,
 author = {AVRILLON, Sylvie and アヴリロン, シルビー and AVRILLON, Sylvie},
 month = {2016-02-17},
 note = {This thesis describes a novel pMOS pixel device which could be used to build high resolution tracking detectors for particle physics experiments.  The device was developed as part of the on going R&D work for the BELLE experiment at KEK.<br />  The pMOS pixel, located on the ohmic side of a depleted pin diode, consists of a n-well where a double drain pMOS transistor is implanted.  The outputs from the drain nodes of the pMOS pixel array are ganged together to make a strip-like structure.  This arrangement has some interesting properties.  It has a built-in amplification action, resulting in high signal-to-noise detection of charged particles.  It also has the advantage of a two-dimensional read-out configuration on a single-sided device.<br />  We designed and built a number of simple pMOS pixel prototypes.  Using infra-red light, we successfully checked the feasibility of implanting a double drain pMOS transistor in the electrode of a pin diode for particle detection, as well as the feasibility of the strip-like readout configuration.  Evaluation of the charge amplification gain and noise performances of the pMOS pixel were the main areas of our study.  We also tested the pMOS pixel prototypes with test beams., 総研大甲第171号},
 title = {Study of a pMOS pixel detector},
 year = {}
}