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Study of a pMOS pixel detector
https://ir.soken.ac.jp/records/580
https://ir.soken.ac.jp/records/580709f08d8-1490-4a7f-b3df-d9b61f3b2396
名前 / ファイル | ライセンス | アクション |
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要旨・審査要旨 / Abstract, Screening Result (144.6 kB)
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Item type | 学位論文 / Thesis or Dissertation(1) | |||||
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公開日 | 2010-02-22 | |||||
タイトル | ||||||
タイトル | Study of a pMOS pixel detector | |||||
タイトル | ||||||
タイトル | Study of a pMOS pixel detector | |||||
言語 | en | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_46ec | |||||
資源タイプ | thesis | |||||
著者名 |
AVRILLON, Sylvie
× AVRILLON, Sylvie |
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フリガナ |
アヴリロン, シルビー
× アヴリロン, シルビー |
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著者 |
AVRILLON, Sylvie
× AVRILLON, Sylvie |
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学位授与機関 | ||||||
学位授与機関名 | 総合研究大学院大学 | |||||
学位名 | ||||||
学位名 | 博士(理学) | |||||
学位記番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 総研大甲第171号 | |||||
研究科 | ||||||
値 | 数物科学研究科 | |||||
専攻 | ||||||
値 | 12 加速器科学専攻 | |||||
学位授与年月日 | ||||||
学位授与年月日 | 1996-03-21 | |||||
学位授与年度 | ||||||
値 | 1995 | |||||
要旨 | ||||||
内容記述タイプ | Other | |||||
内容記述 | This thesis describes a novel pMOS pixel device which could be used to build high resolution tracking detectors for particle physics experiments. The device was developed as part of the on going R&D work for the BELLE experiment at KEK.<br /> The pMOS pixel, located on the ohmic side of a depleted pin diode, consists of a n-well where a double drain pMOS transistor is implanted. The outputs from the drain nodes of the pMOS pixel array are ganged together to make a strip-like structure. This arrangement has some interesting properties. It has a built-in amplification action, resulting in high signal-to-noise detection of charged particles. It also has the advantage of a two-dimensional read-out configuration on a single-sided device.<br /> We designed and built a number of simple pMOS pixel prototypes. Using infra-red light, we successfully checked the feasibility of implanting a double drain pMOS transistor in the electrode of a pin diode for particle detection, as well as the feasibility of the strip-like readout configuration. Evaluation of the charge amplification gain and noise performances of the pMOS pixel were the main areas of our study. We also tested the pMOS pixel prototypes with test beams. | |||||
所蔵 | ||||||
値 | 有 |