{"_buckets": {"deposit": "df35d9e3-cf56-4052-afb5-077d9a491989"}, "_deposit": {"created_by": 1, "id": "580", "owners": [1], "pid": {"revision_id": 0, "type": "depid", "value": "580"}, "status": "published"}, "_oai": {"id": "oai:ir.soken.ac.jp:00000580", "sets": ["14"]}, "author_link": ["8800", "8798", "8799"], "item_1_biblio_info_21": {"attribute_name": "書誌情報（ソート用）", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "1996-03-21", "bibliographicIssueDateType": "Issued"}, "bibliographic_titles": [{}]}]}, "item_1_creator_2": {"attribute_name": "著者名", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "AVRILLON, Sylvie"}], "nameIdentifiers": [{"nameIdentifier": "8798", "nameIdentifierScheme": "WEKO"}]}]}, "item_1_creator_3": {"attribute_name": "フリガナ", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "アヴリロン, シルビー"}], "nameIdentifiers": [{"nameIdentifier": "8799", "nameIdentifierScheme": "WEKO"}]}]}, "item_1_date_granted_11": {"attribute_name": "学位授与年月日", "attribute_value_mlt": [{"subitem_dategranted": "1996-03-21"}]}, "item_1_degree_grantor_5": {"attribute_name": "学位授与機関", "attribute_value_mlt": [{"subitem_degreegrantor": [{"subitem_degreegrantor_name": "総合研究大学院大学"}]}]}, "item_1_degree_name_6": {"attribute_name": "学位名", "attribute_value_mlt": [{"subitem_degreename": "博士（理学）"}]}, "item_1_description_1": {"attribute_name": "ID", "attribute_value_mlt": [{"subitem_description": "1996011", "subitem_description_type": "Other"}]}, "item_1_description_12": {"attribute_name": "要旨", "attribute_value_mlt": [{"subitem_description": "This thesis describes a novel pMOS pixel device which could be used to build high resolution tracking detectors for particle physics experiments.  The device was developed as part of the on going R\u0026D work for the BELLE experiment at KEK.\u003cbr /\u003e  The pMOS pixel, located on the ohmic side of a depleted pin diode, consists of a n-well where a double drain pMOS transistor is implanted.  The outputs from the drain nodes of the pMOS pixel array are ganged together to make a strip-like structure.  This arrangement has some interesting properties.  It has a built-in amplification action, resulting in high signal-to-noise detection of charged particles.  It also has the advantage of a two-dimensional read-out configuration on a single-sided device.\u003cbr /\u003e  We designed and built a number of simple pMOS pixel prototypes.  Using infra-red light, we successfully checked the feasibility of implanting a double drain pMOS transistor in the electrode of a pin diode for particle detection, as well as the feasibility of the strip-like readout configuration.  Evaluation of the charge amplification gain and noise performances of the pMOS pixel were the main areas of our study.  We also tested the pMOS pixel prototypes with test beams.", "subitem_description_type": "Other"}]}, "item_1_description_7": {"attribute_name": "学位記番号", "attribute_value_mlt": [{"subitem_description": "総研大甲第171号", "subitem_description_type": "Other"}]}, "item_1_select_14": {"attribute_name": "所蔵", "attribute_value_mlt": [{"subitem_select_item": "有"}]}, "item_1_select_8": {"attribute_name": "研究科", "attribute_value_mlt": [{"subitem_select_item": "数物科学研究科"}]}, "item_1_select_9": {"attribute_name": "専攻", "attribute_value_mlt": [{"subitem_select_item": "12 加速器科学専攻"}]}, "item_1_text_10": {"attribute_name": "学位授与年度", "attribute_value_mlt": [{"subitem_text_value": "1995"}]}, "item_1_text_20": {"attribute_name": "業務メモ", "attribute_value_mlt": [{"subitem_text_value": "（2018年2月13日）本籍など個人情報の記載がある旧要旨・審査要旨を個人情報のない新しいものに差し替えた。承諾書等未確認。要確認該当項目修正のこと。"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "AVRILLON, Sylvie", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "8800", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2016-02-17"}], "displaytype": "simple", "download_preview_message": "", "file_order": 0, "filename": "甲171_要旨.pdf", "filesize": [{"value": "144.6 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_11", "mimetype": "application/pdf", "size": 144600.0, "url": {"label": "要旨・審査要旨 / Abstract, Screening Result", "url": "https://ir.soken.ac.jp/record/580/files/甲171_要旨.pdf"}, "version_id": "516beac0-d5e7-40f7-9d6c-33558253a9af"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "thesis", "resourceuri": "http://purl.org/coar/resource_type/c_46ec"}]}, "item_title": "Study of a pMOS pixel detector", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Study of a pMOS pixel detector"}, {"subitem_title": "Study of a pMOS pixel detector", "subitem_title_language": "en"}]}, "item_type_id": "1", "owner": "1", "path": ["14"], "permalink_uri": "https://ir.soken.ac.jp/records/580", "pubdate": {"attribute_name": "公開日", "attribute_value": "2010-02-22"}, "publish_date": "2010-02-22", "publish_status": "0", "recid": "580", "relation": {}, "relation_version_is_last": true, "title": ["Study of a pMOS pixel detector"], "weko_shared_id": 1}